Metal-on-metal capacitors

ABSTRACT

Capacitor structures with pitch-matched capacitor unit cells are described. In an embodiment, the capacitor unit cells are formed by interdigitated finger electrodes. The finger electrodes may be pitch-matched in multiple metal layers within a capacitor unit cell, and the finger electrodes may be pitch-matched among an array of capacitor unit cells. Additionally, border unit cells may be pitch-matched with the capacitor unit cells.

BACKGROUND Field

Embodiments described herein relate to capacitors used in semiconductordevices. More particularly, embodiments described herein are related tocapacitors within an analog-to-digital converter circuit.

Background Information

A capacitor digital-to-analog convertor (DAC) is a useful component inmixed signal circuits and compared to other types of DAC has theadvantage of lower power. The advantage of a capacitive DAC lies in thecompact area and its low power. One of the most common uses for acapacitive DAC is in a successive approximation register (SAR)analog-to-digital converter (ADC). In literature, high resolution SARADCs have large total capacitors to improve matching accuracy for thetiny lowest significant bit (LSB) capacitors, which increases chip areathus reducing the benefit of a capacitive DAC.

SUMMARY

Capacitor structures with capacitor unit cells are described. In anembodiment, a capacitor structure includes an array of capacitor unitcells surrounded by a plurality of border unit cells. Each capacitorunit cell may include a first plurality of finger electrodesinterdigitated with a second plurality of finger electrodes, and eachborder unit cell may include a first plurality of dummy fingerelectrodes interdigitated with a second plurality of dummy fingerelectrodes. In an embodiment, the first and second plurality of fingerelectrodes are pitched-matched across the array of capacitor unit cells,and the first and second plurality of dummy finger electrodes arepitch-matched with the first and second plurality of finger electrodes.For example, the first and second plurality of dummy finger electrodesmay be characterized by dimensions and pitch as the first and secondpluralities of finger electrodes. The array of capacitor unit cells maybe formed of a plurality of capacitor main unit cells, and a pluralityof capacitor sub-unit cells, with each capacitor main unit cell and eachcapacitor sub-unit cell characterized by an approximately equivalent viadensity as well. Similarly, the border unit cells may have the sameapproximately equivalent via density.

In an embodiment, the capacitor structure includes terminals integratedinto the capacitor unit cells. In one implementation a capacitorstructure includes a lower metal layer including a first array of fingerelectrodes interdigitated with a second array of finger electrodeswithin a corresponding array of capacitor unit cells, and an upper metallayer including a third array of finger electrodes interdigitated with afourth array of finger electrodes within the array of capacitor unitcells, where the first and second arrays of finger electrodes areorthogonal to the third and fourth arrays of finger electrodes. In anembodiment, the first array of finger electrodes includes a common lowerrail extending through a first series of capacitor unit cells within thearray of capacitor unit cells, with a corresponding series of the firstarray of finger electrodes and the third array of finger electrodes areelectrically connected to the common lower rail. In addition, the fourtharray of finger electrodes may include a common upper rail extendingthrough a second series of capacitor unit cells within the array ofcapacitor unit cell, with a corresponding series of the fourth array offinger electrodes and the second array of finger electrodes electricallyconnected to the common upper rail. The common lower and upper rails mayadditionally extend through corresponding border cells.

In an embodiment, the capacitor structure may leverage an underlyingtransistor poly layer to form power de-coupling capacitors. For example,a capacitor structure may include a lower metal layer including a firstarray of finger electrodes interdigitated with a second array of fingerelectrodes within a corresponding array of capacitor unit cells, and anupper metal layer including a third array of finger electrodesinterdigitated with a fourth array of finger electrodes within the arrayof capacitor unit cells. A polysilicon layer may be located below thelower metal layer, and include a fifth array of finger electrodesinterdigitated with a sixth array of finger electrodes. In oneconfiguration, the first, second, fifth, and sixth arrays of fingerelectrodes are orthogonal to the third and fourth arrays of fingerelectrodes. In an embodiment, the fifth array finger electrodes iscoupled to ground, while the sixth array of finger electrodes is coupledto power.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an analog-to-digital converter (ADC) inaccordance with an embodiment.

FIG. 2 is a perspective view illustration for a capacitor main unit cellin accordance with an embodiment.

FIG. 3 is a perspective view illustration for a capacitor sub-unit cellin accordance with an embodiment.

FIG. 4 is a perspective view of a capacitor structure in accordance withan embodiment.

FIG. 5 is a schematic top view illustration of a capacitor structure inaccordance with an embodiment.

FIG. 6 is a flowchart of a method for operating an analog-to-digitalconverter in accordance with an embodiment.

DETAILED DESCRIPTION

Embodiments describe metal-oxide-metal (MOM) capacitor structures thatmay be used in emerging integrated circuit designs, and accommodate thecomplex design fabrication rules and multiple patterning complications.The structures in accordance with embodiments may achieve highercapacitance density than conventional structures with improved matchingand lower silicon die area requirement. Furthermore, embodiments mayalso be implemented as sub-femto farads compact capacitance structuresfor low power requirements. The other possible applications includeprogrammable gain amplifier, digital to analog converters, gain stages.

A capacitor DAC is an array structure of the small unit capacitors. Thetotal capacitor value is dictated by the performance requirement. Inmajority of the applications, the total size of the capacitor array isdetermined by the smallest unit cell that can be generated to satisfythe matching requirement. In one aspect, the capacitor structures inaccordance with embodiments may be fabricated in a compact area, such asless than 5 μm×5 μm for each capacitor unit cell, fall in the smallestarea bin in the area guidelines, and mitigate wasted space. Thecapacitors structures in accordance with embodiments may include one ormore capacitors, composed of one or more capacitor main unit cells andcapacitor sub-unit cells. Collectively, the capacitor main unit cellsand capacitor sub-unit cells may be referred to as capacitor unit cells.

In advanced technologies, it has been observed that one of the majorissues for matched capacitors is multiple patterning. Multiplepatterning is the process of fabricating a single layer of metal usingdifferent masks for processing different fingers. The fabrication rulesare complex with forbidden patterns of metal wiring layers and vialayers making the design of compact capacitance structures complex. Inaddition to metal wiring layers, even via layers are multiple patternedand this causes another layer of issue in matched capacitor designs.

The capacitor unit cells in accordance with embodiments may achieve acapacitance which is immune to issues arising from multiple patterning.The capacitor unit cell is repeated to form a matrix of cells. The metalwires and the connecting vias are designed in a way that they aresymmetrical across the whole matrix and misalignment in multiplepatterning is a mitigated source for capacitance matching issues. In anembodiment, capacitor main unit cells and capacitor sub-unit cellswithin a same matrix capacitor structure are “pitch-matched.” Forexample, while adjacent capacitor main unit cells and capacitor sub-unitcells may have different electrical connections, and be designed fordifferent capacitances, they may share identical metal wiring layers(finger electrodes), with identical pitch and dimensions. Furthermore,vias used to connect the finger electrodes in multiple metal layers mayhave a different layout to effect the different electrical connections,while via density remains substantially the same. For example, capacitormain unit cells and capacitor sub-unit cells may have a differentarrangement of vias, yet similar via density.

In another aspect, the capacitor structures in accordance withembodiments include terminals integrated into the capacitor unit cell.This differs from traditional MOM capacitance structures in which theterminals of the capacitors are usually placed outside of the capacitorunit cell structure in orthogonal directions, causing considerable areaoverhead. The capacitor unit cells in accordance with embodiments mayaccordingly be more flexible to use and facilitate arraying in a matrixfashion.

In yet another aspect, some capacitor structures in accordance withembodiments use matched poly (e.g. polysilicon) layers from thetransistor layer to create power de-coupling capacitors. In someembodiments, “pitch-matching” extends to the poly layers, such thatrepeating transistor structures and gate poly layers are uniform acrossthe capacitor main unit cells and capacitor sub-unit cells within thematrix capacitor structure.

In various embodiments, description is made with reference to figures.However, certain embodiments may be practiced without one or more ofthese specific details, or in combination with other known methods andconfigurations. In the following description, numerous specific detailsare set forth, such as specific configurations, dimensions andprocesses, etc., in order to provide a thorough understanding of theembodiments. In other instances, well-known semiconductor processes andmanufacturing techniques have not been described in particular detail inorder to not unnecessarily obscure the embodiments. Reference throughoutthis specification to “one embodiment” means that a particular feature,structure, configuration, or characteristic described in connection withthe embodiment is included in at least one embodiment. Thus, theappearances of the phrase “in one embodiment” in various placesthroughout this specification are not necessarily referring to the sameembodiment. Furthermore, the particular features, structures,configurations, or characteristics may be combined in any suitablemanner in one or more embodiments.

The terms “above”, “over”, “upper”, “lower”, “between”, and “on” as usedherein may refer to a relative position of one layer with respect toother layers. One layer “above”, “over”, or “on” another layer or bonded“to” or in “contact” with another layer may be directly in contact withthe other layer or may have one or more intervening layers. One layer“between” layers may be directly in contact with the layers or may haveone or more intervening layers.

Referring now to FIG. 1 a block diagram is provided of ananalog-to-digital converter (ADC) in accordance with embodiments. ADC100 is an embodiment of an SAR ADC which may be included in a system onchip (SoC) device. ADC 100 includes SAR control unit 101,digital-to-analog converter (DAC) 103, and comparator circuit 105. ADC100 receives input signal 110 to be measured, reference signal 112, andcommunicates with other portions of SoC via system bus 114.

SAR control unit 101 may correspond to a state machine or other suitableprocessing unit designed to adjust and route signals to DAC 103 andcomparator 105 in order to determine a digital value corresponding to avoltage level of an input signal. In operation, SAR control unit 101 mayreceive a command via system bus 114 to begin a measurement of thevoltage level of input signal 110. In response to receiving the command,SAR control unit adjusts switches in DAC 103 to couple input signal 110to a first terminal of each of a plurality of capacitors 107 within DAC103 and adjust switches to couple a second terminal of each ofcapacitors 107 to a ground signal. Each of capacitors 107 will begincharging and SAR control unit 101 allows the various capacitors tocharge to a voltage level equal to the voltage level of input signal110, at which point SAR control unit 101 decouples the first terminalfrom input signal 110. This process is sometimes referred to as“sampling the input.”

DAC 103 is implemented as a capacitive DAC, i.e., an array of capacitorsare used rather than an array of resistors such as used in resistiveDACs. DAC 103 may receive a series of digital signals from SAR controlunit 101 and, in response, output a corresponding voltage level. DAC 103includes capacitors 107 and a plurality of switches that enable thefirst terminal of each of capacitors 107 to be independently coupled toeither input signal 110 or reference signal 112. Capacitors 107 may bedesigned such that a first capacitor has a first capacitance value andeach additional capacitor has a capacitance value equal to one half ofthe capacitance of the prior capacitor. For example, if the firstcapacitor has a capacitance of “C,” then the second capacitor would havea capacitance of ½ C, the third would have a capacitance of ¼ C, then ⅛C, and so on.

Once input signal 110 has been sampled, then SAR control unit 101couples the first terminal of the first capacitor to reference signal112, then couples the second terminal of each of the plurality ofcapacitors to a first input of comparator circuit 105. An output of thecomparator corresponds to the most significant bit (MSB) of a valuecorresponding to the voltage level of input signal 110. SAR controlcircuit 101 decouples the second terminal of the capacitors fromcomparator circuit 105 and then couples the first terminal of the secondcapacitor to reference signal 112 and then again couples the secondterminal of each capacitor to the first input of comparator circuit 105.The updated output of the comparator corresponds to the second MSB ofthe value corresponding to the voltage level of input signal 110. Thisprocess repeats until all bits of the value corresponding to the voltagelevel of input signal 110 have been determined. In various embodiments,the result may be stored in a register within SAR control unit 101 ormay be output onto system bus 114.

A total number of capacitors required for DAC 103 is dependent upon aresolution of ADC 100, i.e., a number of bits of the value representingthe voltage of input signal 110 (i.e., the result). At least onecapacitor is needed for each bit. In some embodiments, additionalcapacitors may be required for sampling input signal 110, forstabilizing or adjusting reference signal 112, for general noisereduction, etc. Accuracy for ADC 100 is dependent on the relativecapacitance values of each capacitor for each bit of the result. Asmentioned, if the capacitance for the first capacitor corresponding tothe MSB is ‘C’, then the capacitance for the second capacitorcorresponding to the second MSB needs to be ½ C for the best possibleaccuracy. The more the capacitance of the second capacitor deviates from½ C, the less accurate the measurement for the second MSB will be. Thesame principal applies to the remaining capacitors of the plurality ofcapacitors. Therefore, design of DAC 103 may include capacitor designsthat can be adjusted to a fine resolution of capacitance.

The total capacitor value is dictated by the performance requirement.The total size of the capacitor array is, however, determined by thesmallest unit cell that can be generated to satisfy the matchingrequirement. In some embodiments, when compared to other DAC designs,such as, for example, a resistive ladder DAC, a capacitive DAC such asDAC 103 may be characterized by a relatively compact area and low power.

It is noted that ADC 100 of FIG. 1 is merely an example fordemonstration of disclosed concepts. Some functional components and someoperational details have been omitted to focus on the disclosed subjectmatter. In other embodiments, additional functional units may beincluded and operation may deviate from the description above.

Referring now to FIG. 2, a perspective view illustration is provided fora capacitor main unit cell in accordance with embodiments. The capacitormain unit cell 200 may be one structure used in a capacitive DAC in anSoC, such as, e.g., DAC 103, to create capacitors of variouscapacitances by linking to other unit capacitor cells. Main unit cell200 is a three dimensional structure employing a plurality of metallayers formed during manufacture of the SoC. Generally speaking, metallayers in a semiconductor manufacturing process may be referred to inthe order each layer is deposited during fabrication, from the firstmetal layer (M1), and above. The illustrative example provided in FIG. 2provides finger electrodes formed in M1 through the fourth metal layer(M4), though this is understood to be exemplary, and embodiments are notlimited to four metal layers.

In accordance with embodiments, the structure of the capacitor main unitcell 200 may be pitch-matched from the transistor device to the topmetal layer, e.g. M4. A top metal grounding structure may additionallybe provided to protect the capacitor from external disturbances that maybe generated due to addition of dummy shapes nearby to the cell. Theinterdigitated fingers produce tight couplings and allow the creation ofa homogenous array.

As shown, a capacitor main unit cell 200 may be include a first metallayer M1 including an array of finger electrodes 220A interdigitatedwith an array of finger electrodes 220B. A second metal layer M2 isformed over M1, including an array of finger electrodes 230Ainterdigitated with an array of finger electrodes 230B. Likewise, metallayers M3, M4 may have arrays of finger electrodes 240A, 250Ainterdigitated with arrays of finger electrodes 240B, 250B,respectively. Vias 225, 235, 245 may be used to electrically connect thefinger electrodes in the meta layers M1-M4. As shown, the interdigitatedfinger electrodes within a metal layer may be metal wires, and parallelto one another. The space around the finger electrodes and vias arefilled by a dielectric material, not illustrated for visualization.Exemplary dielectric materials include oxides, such as silicon oxide,and other traditional interlayer dielectric materials, including lowdielectric constant (low-k) materials. Capacitance is created in thecapacitor main unit cell 200 due to effects of electric fields acrossthe interdigitated and stacked finger electrodes. The amount ofcapacitance may be determined by dimension of the finger electrodes, andproperties of the dielectric material(s).

In the embodiment illustrated, finger electrodes 220A, 230A, 240A, 250Ain different metal layers are electrically connected by the vias, whilefinger electrodes 220B, 230B, 240B, 250B are electrically connected bythe vias. These respective finger electrodes, may also be electricallyseparate. For example, finger electrodes 220A-250A may be connected to adigital logic bit node 106 to the SAR control 101, while fingerelectrodes 220B-250B are connected to a floating node 108 to thecomparator 105 input. In accordance with embodiments, the fingerelectrodes in adjacent metal layers may be orthogonal to each other. Forexample, finger electrodes 220A, 220B, 240A, 240B are orthogonal tofinger electrodes 230A, 230B, 250A, 250B. In an embodiment, the interiorfinger electrodes (e.g. 220B, 230B, 240B, 250B) are electrically coupledto a sensitive node, or critical terminal, such as a floating node 108to the comparator 106 input. Hence, there may be an odd number ofinterior finger electrodes, to keep stray capacitance on the criticalterminal low. In such a configuration, the exterior finger electrodes(e.g. 220A, 230A, 240A, 250A) may be electrically coupled to a lesssensitive node, such as a digital logic bit node 106 to the SAR control101. Hence, there may be an even number of exterior finger electrodes.

In accordance with embodiments, the capacitor main unit cells 200 areinternally “pitch-matched.” That is, the arrangement of fingerelectrodes may have identical dimensions and pitch in different metallayers. For example, metal layers M1 and M3 may have identicalarrangements of finger electrodes. Metal layers M2 and M4 may likewisehave identical arrangements of finger electrodes. Furthermore,dimensions and/or pitch of the finger electrodes may be the same in allmetal layers M1-M4. Furthermore, via density and layout may be the samebetween certain metal layers. In addition, via density may be the samein adjacent dielectric layers (e.g. between M1-M2 compared to M20M3),despite having different arrangements.

In an embodiment, a poly (e.g. polysilicon) layer 210 from thetransistor device layer (e.g. from transistor gate poly), is patternedto form finger electrodes that are pitch-matched with the fingerelectrodes in the overlying metal layers in the unit cell 200. The polylayer 210 can be patterned to form finger electrodes 210A, 210B tocreate power de-coupling capacitors. For example, the finger electrodes210A, 210B can be connected to power (e.g. Vdd) and ground,respectively, or vice-versa, to create a capacitor. Alternatively, bothfinger electrodes 210A, 210B may be connected to ground. Furthermore,the pitch-matched finger electrodes 210A, 210B can be formed over auniform array of transistors underneath the metal capacitor structure toprovide additional uniformity.

Looking now to a top side of the capacitor main unit cell 200, a patternof ground bars 270, 280 may be formed over the stacked fingerelectrodes. The ground bars 270, 280 may be formed in multiple metallayers. In the embodiment illustrated, a top metal layer (e.g. M5)includes ground bars 270 on opposite sides of a coupling bar 260. Forexample, coupling bar 260 may be used to couple to one or more fingerelectrodes (e.g. 250A) in M4. Thus, M5 may include both one or morecoupling bars 260, and ground bars 270. An additional metal layer M6 maybe formed over M5, and be patterned to include an arrangement of groundbars 280 that are electrically coupled to ground bards 270 with on orvias. Ground bars 280 may be orthogonal to ground bars 270, and couplingbar 260.

In accordance with embodiments, the terminals for the finger electrodesmay be integrated into the capacitor main unit cell 200, and extendthrough a series of capacitor unit cells. Such a configuration mayreduce area overhead, and facilitate arraying in a matrix fashion. Forexample, the terminals may be integrated into the coupling bar 260, oras part of the finger electrodes. In an embodiment, terminals areintegrated into the array of finger electrodes (220B, 230B, 240B, 250B)as a common rail 241. In an embodiment, common rail 241 is electricallycoupled to node 106. Common rail 241 may be integrated into any of themetal layers M1-M4 including the finger electrodes. In the exampleillustrated, one or more common rails 241 are integrated into M3 as partof finger electrodes 240B. Similarly, terminals may be integrated aspart of the finger electrodes (220A, 230A, 240A, 250A) as a common rail231 in any of metal layers M1-M4 including finger electrodes. In anembodiment, common rail 231 is electrically coupled to node 108. In theexample illustrated, one or more common rails 231 are integrated into M2as part of finger electrodes 230A, though this specific metal layer isexemplary and embodiments are not so limited. The common rails 231, 241may also function as, and share the same dimensions (e.g. width,thickness) with the surrounding finger electrodes. However, common rails231, 241 may be longer than the finger electrodes so that they canextend to an adjacent unit cell or border cell. In an embodiment,coupling bar 260 is utilized as a terminal/common rail for fingerelectrodes (220B, 230B, 240B, 250B).

The capacitor main unit cells 200 of FIG. 2 may be arrayed in the DAC103 section of the SAR ADC, with the unit cell capacitance developedkeeping in mind array symmetry requirements. In an embodiment, onecapacitor main unit cell 200 represents the 2nd least significant bit(LSB). Capacitors 107 may include arrays of capacitor main unit cell200, as well as arrays of sub-unit cells, and combinations thereof toachieve the specific capacitances of the capacitors 107. For example,capacitor sub-unit cells may be created with a pitch-matched structurein which the dimensions, and pitch of the finger electrodes remains thesame (e.g pitch-matched), with different electrical connections and viaconnections. This may be achieved by adding a third terminal, forelectrical connection to a subset of the finger electrodes. For example,the third terminal may be from the poly layer or M4/M5 layer from theexemplary embodiment illustrate. As a result, each unit cell can havethree capacitors, A-B, A-GND, B-GND where A and B are the terminals ofthe capacitors, and GND represents the third terminal, or ground. Inaccordance with embodiments, rearrangement of vias may be done in apitch-matched manner.

Referring now to FIG. 3, a perspective view illustration is provided fora capacitor sub-unit cell 300 in accordance with embodiments. Thecapacitor sub-unit cell 300 may be a three dimensional structure similarto unit cell 200 used in a capacitive DAC in an SoC, such as, e.g., DAC103. In the specific embodiment illustrated, the capacitor sub-unit cell300 is a half-unit cell, though embodiments are not so limited. Forexample, quarter-unit cells or other sub-units may be used in accordancewith embodiments. In an embodiment, the capacitor sub-unit cell 200 ofFIG. 2 represents the 2nd LSB, while the capacitor main unit cell 300 ofFIG. 3 represents the 1st LSB. Other variations are contemplated. In anexemplary half-unit cell structure two different capacitors are formed asingle capacitor sub-unit cell structure. This causes the capacitance toexactly divide into and by connecting one of the terminal properly, anaccurate half capacitance is achieved from the cell.

As shown in FIG. 3, the capacitor sub-unit cell 300 is pitch-matchedwith the capacitor main unit cell 200. In the embodiment illustrated,the arrangement and electrical connections to the finger electrodes220B, 230B, 240B, 250B remains the same, while a first portion of thefinger electrodes 220A, 230A, 240A, 250A remains connected to commonrail 241, and a second portion of the finger electrodes 220A, 230A,240A, (now 220C, 230C, 240C) is now electrically connected to ground. Inan embodiment, this is achieved by connecting the second portion of thefinger electrodes 220A, 230A, 240A, (now 220C, 230C, 240C) to the groundbars 270, 280 and/or finger electrodes 210B (ground). Alternatively,this may be achieved using a second common rail 231G.

In the particular embodiment illustrated, the number of fingerelectrodes 220B, 230B, 240B, 250B connected to the sensitive node (e.g.node 108) remains the same. Thus, only the connections and viaarrangements to finger electrodes 220A, 230A, 240A, is changed. In theexemplary embodiment illustrated, finger electrodes 250A remain whollyconnected to common rail 231. In other embodiments, a second portion offinger electrodes 250A may also be electrically connected to ground. Inaddition, in the embodiment illustrated in FIG. 3, finger electrodes210A, 210B are pitch-matched and electrically coupled in the same manneras in FIG. 2, forming a de-coupling capacitor structure. Similarly, thepitch-matched finger electrodes 210A, 210B can be formed over a uniformarray of transistors underneath the metal capacitor structure to provideadditional uniformity. Thus, the array of transistors is uniform, andpitch-matched across the capacitor main unit cells 200 and capacitorsub-unit cells 300.

Referring now to FIGS. 4-5, a perspective view and schematic top viewillustration, respectively, are provided of a capacitor structure inaccordance with embodiments. As shown, the capacitor structure 400includes 2-dimensional array, or matrix, of capacitor unit cells 200and/or 300. Capacitors 107 can be created from capacitor unit cells 200,300 from one or more rows or columns. In the embodiment illustrated,three capacitors 107 a-n are shown, though this is exemplary. The matrixof capacitor unit cells may additionally be surrounded by a pattern(e.g. a boundary) of pitch-matched border unit cells 510. The borderunits cells shown illustrated by darker shading may be speciallydesigned to maintain symmetry. They may be exactly the same size of acapacitor unit cell to make sure that the capacitor unit cells see thesame capacitance and structure on both of its sides. This ensures thatthe stray capacitance is uniform leading to more uniform differentialnon-linearity (DNL) distribution. Additionally, identical arrays oftransistors may be located underneath the border unit cells as with thecapacitor unit cells.

In an embodiment, common rails 231 in different series (e.g. columns)are not connected to the same terminal interconnects 420, while commonrails 241 are connected to a common terminal interconnect 410. Thus,different terminal interconnects 420 may be coupled to differentsignals. The border unit cells 510 may be substantially identical, andpitch-matched, with the capacitor unit cells 200, 300 with somedifferences. Foremost, fingers 220A-250A, and 220B-250B correspond to“dummy” fingers in the borer unit cells 510, and may be connected toground. Additionally, common rails 231, 241 may extend through theborder unit cells. In such a structure, the common rails 231, 241 extendthrough the border unit cells 510, and may not be connected to adjacentmetal layers by vias within the border unit cells 510. Yet the samecommon rails 231, 241 are connected to adjacent metal layers with viasin the corresponding series of capacitor unit cells 200, 300.Alternative arrangements are also possible in addition to thoseillustrated. For example common rails 231, 241 may be formed in multiplemetal layers, and may be connected by vias within the border unit cells510 or capacitor unit cells 200, 300.

As previously described, the border unit cells 510 may maintain symmetryand wiring densities. This may also be true with via densities.Accordingly, while some via arrangements are different, via density maybe the same between border unit cells 510, capacitor main unit cells200, and the one or more variations of capacitor sub-unit cells 300.Thus, the border unit cells 510 maintain the pitch-matched structure,with subtle reconfigurations to keep the patterns uniform for examplewith regard to metals and vias, and additional the poly layers andunderlying transistors.

In an embodiment, a capacitor structure 400 includes an array ofcapacitor unit cells 200, 300 surrounded by a plurality of border unitcells 510. The array of capacitor unit cells may be an arrangement ofcapacitor main unit cells 200, and one more types of capacitor sub-unitcells 300 (e.g. designed for different capacitances). Each capacitorunit cell 200, 300 includes a first plurality of finger electrodes (e.g.230A) interdigitated with a second plurality of finger electrodes (e.g.230B). Each border unit cell 510 also includes a first plurality of“dummy” finger electrodes interdigitated with a second plurality of“dummy” finger electrodes. In accordance with embodiments, the first andsecond plurality of finger electrodes (e.g. 230A, 230B) arepitched-matched across the array of capacitor unit cells 200, 300, andthe “dummy” finger electrodes are pitch-matched with the first andsecond pluralities of finger electrodes (e.g. 230A, 230B). For example,the first and second plurality of dummy finger electrodes can becharacterized by same dimensions and pitch as the first and secondpluralities of finger electrodes. While the dummy finger electrodes arepitch-matched, they are connected differently. For example, both thefirst and second pluralities of dummy finger electrodes may be connectedto ground.

As described with regard to FIGS. 2-3, the capacitor unit cells 200,300, and also the border cells, may be formed in multiple metal layers.For example, each capacitor unit cell 200, 300 further includes a thirdplurality of finger electrodes 240A interdigitated with a fourthplurality of finger electrodes 240B, each of the first and secondplurality of finger electrodes 230A, 230B are within a lower metal layer(e.g. M2), and each of the third and fourth plurality of fingerelectrodes 240A, 240B are within an upper metal layer (e.g. M3), whereinthe third and fourth pluralities of finger electrodes 240A, 240B areorthogonal to the first and second pluralities of finger electrodes230A, 230B. It is to be appreciated that selection of M2 and M3 as lowerand upper metal layers, respectively, is made here for illustrativepurposes only, and embodiments are not limited to these specific metallayers.

The array of capacitor unit cells 200, 300 may include a plurality ofcapacitor main unit cells 200, and a plurality of capacitor sub-unitcells 300, both of which may be characterized by an approximatelyequivalent via density between the lower metal layer (e.g. M2) and theupper metal layer (e.g. M3). Furthermore, the each border unit cell 510may include vias between M2 and M3, also characterized by theapproximately equivalent via density.

The capacitor structures 400 in accordance with embodiments mayadditionally include terminals integrated into the capacitor unit cells200, 300. For example, the first array of finger electrodes 230A mayinclude a common lower rail (for example, common rail 231 located in M2,though the common rail may be located in any metal layer) extendingthrough a first series of capacitor unit cells within the array ofcapacitor unit cells. In this manner, the first array of fingerelectrodes 230A and the third array of finger electrodes 240A areelectrically connected to the common lower rail 231 and terminalinterconnect 420. The common lower rails 231 may be connected to eachother, and same terminal interconnect 420, in a way to form a binaryDAC. Alternatively, the common lower rails 231 for different series ofcapacitors may be connected corresponding separate terminalinterconnects 420 in a way to form a segmented DAC.

Likewise, the fourth array of finger electrodes 240B may include acommon upper rail (e.g. 241 located in M3) extending through a secondseries of capacitor unit cells within the array of capacitor unit cells.A corresponding series of the fourth array of finger electrodes 240B andthe second array of finger electrodes 230B are electrically connected tothe common upper rail (e.g. 241). In an embodiment, the plurality ofcommon upper rails 241 are connected to a terminal interconnect 410. Inan embodiment, the common lower rail 231 extends through a first borderunit cell 510, while the common upper rail 241 extends through a secondborder unit cell 510.

The capacitor structures 400 in accordance with embodiments mayadditionally use matched poly (e.g. polysilicon) layers from thetransistor layer to create power de-coupling capacitors. For example, apoly layer 210 below the lower metal layer (e.g. M2, as well as M1) mayinclude a fifth plurality of finger electrodes 210A, interdigitated witha sixth plurality of finger electrodes 210B, where the first, second,fifth, and sixth pluralities of finger electrodes (230A, 230B, 210A,210B), are orthogonal to the third and fourth pluralities of fingerelectrodes (240A, 240B). The fifth and sixth plurality of fingerelectrodes (210A, 210B) may optionally be pitch-matched with the firstand second plurality of finger electrodes (230A, 230B), though thepatterned poly layer may have a different pitch and dimensions.

Referring now to FIG. 6, a flowchart of a method for operating anembodiment of an analog-to-digital converter (ADC) is shown. Method 600may be used to operate a SAR ADC, such as, for example, ADC 100 inFIG. 1. ADC 100 may further include a capacitor array such as, forexample, capacitor array 400 in FIG. 6. Referring collectively to FIG. 1and FIG. 6, the method may begin in block 601.

ADC 100 receives an input signal (block 602). The input signalcorresponds to a signal for which a voltage level is to be measured. Theinput signal may have a slowly changing (relative to the conversionspeed of ADC 100) voltage level. For example, an output of a temperaturesensor in an enclosure may change some number of millivolts per second.In other embodiments, the voltage level of the input signal may changemore rapidly, such as, e.g., an output of a microphone, which may riseand fall by a volt in less than one microsecond. In some embodiments, inparticular to measure a fast transitioning input signal, ADC 100 maysample the input signal for a predetermined period of time to capturethe voltage level at a particular point in time.

ADC 100 connects the input signal to a first terminal of a plurality ofcapacitors 107 (107 a-n) in capacitor array 400 (block 602). DAC mayinclude a plurality of switching circuits (e.g., analog multiplexors,transmission gates, etc.) to couple the input signal or other referencesignals to each of the plurality of capacitors. In some embodiments, theplurality of capacitors 107 may include all capacitors in capacitorarray 400 while in other embodiments, a proper subset of capacitors inarray 400 may be included in the plurality of capacitors. SAR controllogic 101 adjusts the switching circuits to couple the input signal tothe first terminal of each of the plurality of capacitors. The firstterminal may correspond to terminal interconnects 420 coupled to commonrails 231 of capacitor unit cells 200, 300 for capacitors 107 a-n.

SAR control logic 101 adjusts switching circuits to couple terminalinterconnects 410 to a ground reference voltage while terminalinterconnects 420 are coupled to the input signal (block 606). Thisadjustment allows capacitors 107 a-n to charge to the current voltagelevel of the input signal. Charging the capacitors to the voltage levelof the input signal may be referred to as “sampling” the input signal.It is noted that if the voltage level across capacitors 107 a-n beginshigher than the voltage level of the input signal, then capacitors 107a-n will discharge rather than charge to reach the voltage level of theinput signal.

The further actions of the method may depend on the voltage level acrosseach capacitor of the plurality of capacitors (block 608). In someembodiments, SAR control logic may keep terminal interconnects 420coupled to the input signal and terminal interconnects 410 coupled tothe ground reference for a predetermined amount of time long enough toensure the voltage level across capacitors 107 a-n is equal to thevoltage level of the input signal. In other embodiments, comparator 105may be used to determine that capacitors 107 a-n have charged to thevoltage level of the input signal. In either embodiment, if the voltagelevel across capacitors 107 a-n is not equal to the voltage level of theinput signal, then the method may remain in block 608. Otherwise, themethod may move to block 610.

One capacitor of the plurality of capacitors may be selected and chargedto the voltage level of a reference signal (block 610). Each capacitorof the plurality of capacitors may correspond to one bit of a digitalresult determined by ADC 100. For example, if ADC 100 includes atwelve-bit result register, then the plurality of capacitors includes atleast twelve capacitors, one for each bit of the result (additionalcapacitors may also be included for signal conditioning or otherpurposes). The capacitor corresponding to the most significant bit (MSB)of the digital result has the largest capacitance value of the twelvecapacitors. The capacitance value for each subsequent capacitorcorresponding to the next most significant bit is one-half of thecapacitance of the previous capacitor. A value of each of the capacitorsin array 400 in DAC 103 is critical to the accuracy of ADC 100.Capacitors in array 400 may be sensitive to parasitic capacitances fromsurrounding circuits and from mechanical stress due to temperaturechanges or physical pressure on the IC. Any mismatch in the capacitancesmay cause non-linearity issues in the ADC performance, resulting in lessaccurate results. Use of capacitor sub-unit cell 300 in capacitor array400 may help to achieve a high degree of capacitance matching betweenthe capacitors in array 400, resulting in accurate performance of ADC100, even in the presence of mechanical and temperature induced stress.To determine the digital result, each capacitor is selected, one at atime beginning with the MSB capacitor, and the terminal interconnect 420of the selected capacitor is coupled to a first reference voltagesignal.

The further actions of the method may again depend on the voltage levelacross each capacitor of the plurality of capacitors (block 612). Afterthe selected capacitor has been coupled to the reference voltage, theterminal interconnects 410 of the plurality of capacitors, including theselected capacitor, are coupled to comparator 105 and the voltage levelat the terminal interconnects 410 is compared to a second referencevoltage level. The value of the bit corresponding to the selectedcapacitor is determined by the output of comparator 105.

If the output of comparator 105 is a logic low, then the value of thebit corresponding to the selected capacitor is a ‘0’ (block 614). Alogic low from comparator 105 may correspond to the voltage at theterminal interconnect 410 being less than the second reference voltage.

If the output of comparator 105 is a logic high, then the value of thebit corresponding to the selected capacitor is a ‘1’ (block 616). Alogic high from comparator 105 may correspond to the voltage at theterminal interconnect 410 being greater than the second referencevoltage.

Further actions of the method may depend on a number of capacitorsselected (block 618). If all capacitors corresponding to a bit of thedigital result have not been selected and coupled to the secondreference voltage, then the method may return to block 610 to select thenext capacitor. Otherwise, method 600 may be complete and end in block620.

It is noted that, in regards to a ComplementaryMetal-Oxide-Semiconductor Field-Effect Transistor (or ComplementaryMOSFET, or simply CMOS) circuit design, “logic 1”, “high”, “high state”,or “high level” refers to a voltage sufficiently large to turn on an-channel MOSFET and turn off a p-channel MOSFET, while “logic 0”,“low”, “low state”, or “low level” refers to a voltage that issufficiently small enough to do the opposite. In other embodiments,different technology may result in different voltage levels for “low”and “high.”

It is also noted that method 600 is an example method for operating anembodiment of a SAR ADC. Many embodiments of SAR ADCs are known andmethods for operating other embodiments may differ from the operationsdisclosed in method 600. A different number of operations may beperformed and some operations illustrated to occur in series may beperformed in parallel.

In utilizing the various aspects of the embodiments, it would becomeapparent to one skilled in the art that combinations or variations ofthe above embodiments are possible for forming metal-on-metal capacitorstructures. Although the embodiments have been described in languagespecific to structural features and/or methodological acts, it is to beunderstood that the appended claims are not necessarily limited to thespecific features or acts described. The specific features and actsdisclosed are instead to be understood as embodiments of the claimsuseful for illustration.

What is claimed is:
 1. A capacitor structure comprising: an array ofcapacitor unit cells surrounded by a plurality of border unit cells;each capacitor unit cell comprises a lower metal layer including a firstplurality of finger electrodes interdigitated with a second plurality offinger electrodes; each border unit cell comprises a first plurality ofdummy finger electrodes interdigitated with a second plurality of dummyfinger electrodes in the lower metal layer; and wherein the first andsecond plurality of finger electrodes are pitched-matched across thearray of capacitor unit cells, and the first and second plurality ofdummy finger electrodes are pitch-matched with the first and secondplurality of finger electrodes.
 2. The capacitor structure of claim 1,wherein the first and second plurality of dummy finger electrodes arecharacterized by having same dimensions and pitch as the first andsecond pluralities of finger electrodes.
 3. The capacitor structure ofclaim 2, wherein the first and second plurality of dummy fingerelectrodes are electrically grounded.
 4. The capacitor structure ofclaim 2, wherein each capacitor unit cell further comprises an uppermetal layer including a third plurality of finger electrodesinterdigitated with a fourth plurality of finger electrodes, wherein thethird and fourth pluralities of finger electrodes are orthogonal to thefirst and second pluralities of finger electrodes.
 5. The capacitorstructure of claim 4, wherein the array of capacitor unit cellscomprises a plurality of capacitor main unit cells, and a plurality ofcapacitor sub-unit cells, each capacitor main unit cell and eachcapacitor sub-unit cell characterized by an approximately equivalent viadensity between the lower metal layer and the upper metal layer.
 6. Thecapacitor structure of claim 5, wherein each border unit cell comprisesvias between the low metal layer and the upper metal layer, the borderunit cell vias characterized by the approximately equivalent viadensity.
 7. The capacitor structure of claim 4, wherein the first arrayof finger electrodes comprises a common lower rail extending through afirst series of capacitor unit cells within the array of capacitor unitcells, wherein a corresponding series of the first array of fingerelectrodes and the third array of finger electrodes are electricallyconnected to the common lower rail.
 8. The capacitor structure of claim7, wherein the fourth array of finger electrodes comprises a commonupper rail extending through a second series of capacitor unit cellswithin the array of capacitor unit cells, and a corresponding series ofthe fourth array of finger electrodes and the second array of fingerelectrodes are electrically connected to the common upper rail.
 9. Thecapacitor structure of claim 7, wherein the common lower rail extendsthrough a first border unit cell, and the common upper rail extendsthrough a second border unit cell.
 10. The capacitor structure of claim4, further comprising a polysilicon layer below the lower metal layer,the polysilicon layer including a fifth plurality of finger electrodesinterdigitated with a sixth plurality of finger electrodes, wherein thefirst, second, fifth, and sixth pluralities of finger electrodes areorthogonal to the third and fourth pluralities of finger electrodes. 11.A capacitor structure comprising: a lower metal layer including a firstarray of finger electrodes interdigitated with a second array of fingerelectrodes within a corresponding array of capacitor unit cells; anupper metal layer including a third array of finger electrodesinterdigitated with a fourth array of finger electrodes within the arrayof capacitor unit cells, wherein the first and second arrays of fingerelectrodes are orthogonal to the third and fourth arrays of fingerelectrodes; wherein the first array of finger electrodes comprises acommon lower rail extending through a first series of capacitor unitcells within the array of capacitor unit cells, wherein a correspondingseries of the first array of finger electrodes and the third array offinger electrodes are electrically connected to the common lower rail;and wherein the fourth array of finger electrodes comprises a commonupper rail extending through a second series of capacitor unit cellswithin the array of capacitor unit cell, and a corresponding series ofthe fourth array of finger electrodes and the second array of fingerelectrodes are electrically connected to the common upper rail.
 12. Thecapacitor structure of claim 11, wherein the second series of capacitorunit cells is orthogonal to the first series of capacitor unit calls.13. The capacitor structure of claim 11, wherein the array of capacitorunit cells is surrounded by a plurality of border unit cells.
 14. Thecapacitor structure of claim 13, wherein the common lower rail extendsthrough a first border unit cell.
 15. The capacitor structure of claim14, wherein the common upper rail extends through a second border unitcell.
 16. The capacitor structure of claim 15, wherein each border unitcell comprises an arrangement of metal lines lower and upper metallayers that is pitch-matched with first, second, third, and fourtharrays of finger electrodes.
 17. A capacitor structure comprising: alower metal layer including a first array of finger electrodesinterdigitated with a second array of finger electrodes within acorresponding array of capacitor unit cells; an upper metal layerincluding a third array of finger electrodes interdigitated with afourth array of finger electrodes within the array of capacitor unitcells; and a polysilicon layer below the lower metal layer, thepolysilicon layer including a fifth array of finger electrodesinterdigitated with a sixth array of finger electrodes; wherein thefirst, second, fifth, and sixth arrays of finger electrodes areorthogonal to the third and fourth arrays of finger electrodes.
 18. Thecapacitor structure of claim 17, wherein fifth array of fingerelectrodes is coupled to ground, and the sixth array of fingerelectrodes is coupled to power.
 19. The capacitor structure of claim 17,wherein the first array of finger electrodes comprises a common lowerrail extending through a first series of capacitor unit cells within thearray of capacitor unit cells, wherein a corresponding series of thefirst array of finger electrodes and the third array of fingerelectrodes are electrically connected to the common lower rail.
 20. Thecapacitor structure of claim 19, wherein the fourth array of fingerelectrodes comprises a common upper rail extending through a secondseries of capacitor unit cells within the array of capacitor unit cell,and a corresponding series of the fourth array of finger electrodes andthe second array of finger electrodes are electrically connected to thecommon upper rail.